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s mhop microelectronics c orp. a STM8330 symbolv ds v gs i dm e as w a p d c 2 -55 to 150 i d units parameter 30 6 24 vv 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary (n-channel) v dss i d r ds(on) (m ) max 30v 6a 55 @ vgs=4.5v 35 @ vgs=10v dual enhancement mode field effect transistor (n and p chann el) absolute maximum ratings ( t c =25 c unless otherwise noted ) n-channel drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg www.samhop.com.tw mar,18,2010 1 details are subject to change without notice. 62.5 thermal resistance, junction-to-ambient r ja a t c =25 c product summary (p-channel) v dss i d r ds(on) (m ) max -30v -4.2a 138 @ vgs=-4.5v 76 @ vgs=-10v -30 -4.2 -17 20 p-channel t c =70 c a 4.8 -3.3 1.28 w t c =70 c c/w 27.5 16 ver 1.0 s o-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 green product
4 symbol min typ max units bv dss 30 v 1 i gss 10 ua v gs(th) 1.0 v 28 g fs 17 s c iss 440 pf c oss 77 pf c rss 53 pf q g 9.8 nc 9.8 nc q gs 16.5 nc q gd 7.4 t d(on) 7 ns t r 1.2 ns t d(off) 1.7 ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =15v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time v ds =15v,i d =6a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =6a v ds =5v , i d =6a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =4.9a 35 42 55 m ohm c f=1.0mhz c v ds =15v,i d =6a, v gs =10v drain-source diode characteristics and maximum ratings STM8330 www.samhop.com.tw mar,18,2010 2 nc v ds =15v,i d =6a,v gs =4.5v 3.4 1.8 v sd diode forward voltage v gs =0v,i s =1a 0.78 1.3 v b ver 1.0
symbol min typ max units bv dss -30 v -1 i gss 100 na v gs(th) -1.0 v 61 g fs 7 s c iss 428 pf c oss 95 pf c rss 75 pf q g 10 nc 13.5 nc q gs 67 nc q gd 42 t d(on) 9.5 ns t r 1 ns t d(off) 3 ns t f ns gate-drain charge v ds =-15v,v gs =0v switching characteristics gate-source charge v dd =-15v i d =-1a v gs =-10v r gen = 6 ohm total gate charge rise time turn-off delay time v ds =-15v,i d =-4.2a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-4.2a v ds =-5v , i d =-4.2a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-3a 76 106 138 m ohm c f=1.0mhz c v ds =-15v,i d =-4.2a, v gs =-10v drain-source diode characteristics and maximum ratings STM8330 www.samhop.com.tw mar,18,2010 3 nc v ds =-15v,i d =-4.2a,v gs =-4.5v 4.8 -2.0 v sd diode forward voltage v gs =0v,i s =-1a -0.8 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v,v gs =10v.(see figure13) _ _ _ b ver 1.0
STM8330 www.samhop.com.tw mar,18,2010 4 i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature n-channel t j ( c ) ver 1.0 20 16 12 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s =3v v g s =3.5v v g s =10v v g s =4v v g s =4.5v 90 75 60 45 30 15 1 1 4 8 12 16 20 v g s =10v v g s =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =4.5v i d =4.9a v g s =10v i d =6a 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 15 12 9 6 3 0 0 0.8 4.8 4.0 3.2 2.4 1.6 -55 c c 25 t j =1 25 c
STM8330 www.samhop.com.tw mar,18,2010 5 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area ver 1.0 0.1 1 10 30 10 1 0.1 v gs =10v single pulse t a =25 c r ds (o n) l imit 1ms 100 u s 10ms dc 10 0 m s 90 75 60 45 30 15 0 2 4 6 8 10 0 i d =6a 125 c 25 c 75 c 20.010.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 125 c 75 c c os s c rs s 900 750 600 450 300 150 0 10 15 20 25 30 0 5 c is s 10 86 4 2 0 0 1 2 3 4 5 6 7 8 v ds =15v i d =6a 1 10 100 1 10 100 300 vds=15v,id=1a vgs=10v td(off ) tf td(on) tr 70
STM8330 www.samhop.com.tw mar,18,2010 6 t p v ( br )d ss i a s f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance p dm t 1 t 2 1. r ? j a (t)=r (t) * r ? j a 2. r ? j a =s ee datas heet 3. t j m- t a = p dm * r ? j a (t) 4. duty c ycle, d=t 1 /t 2 single pulse 0.5 0.2 0.1 0.05 0.02 0.01 ver 1.0 r g i a s 0.0 1 t p d .u .t l v d s + - v d d a 10v
STM8330 www.samhop.com.tw mar,18,2010 7 -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature p-channel t j ( c ) ver 1.0 10 86 4 20 0.5 1 1.5 2 2.5 3 v g s =-3v v g s =-4v v g s =-4.5v v g s =-5v v g s =-10v 0 -55 c 10 6 4 2 0 0 0.8 1.6 2.4 3.2 4.0 4.8 t j=125 c 8 180150 120 9060 30 0 2 4 6 8 10 1 v g s =-10v v g s =-4.5v 1.51.4 1.3 1.2 1.1 1.0 0.8 0 25 50 75 150 100 125 v g s =-4.5v i d =-3a v g s =-10v i d =-4.2a 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua v g s =-3.5v 25 c
STM8330 www.samhop.com.tw mar,18,2010 8 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area ver 1.0 180150 120 9060 30 0 2 4 6 8 10 0 25 c i d =-4.2a 600500 400 300 200 100 0 ciss coss crss 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =-15v i d =-4.2a 0.1 1 10 10 1 0.1 1ms 100 us 1 10 100 100 10 1 vds=-15v,id=-1a vgs=-10v 20.010.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 25 c 75 c 5.0 125 c 6 td(on) tf 125 c 75 c 0 5 10 15 20 25 30 v gs =-10v single pulse t a =25 c dc 60 tr td(off ) r d s (o n) l im i t 10 ms
t p v ( br )d ss i a s f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM8330 www.samhop.com.tw mar,18,2010 9 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance ver 1.0 r g i a s 0.0 1 t p d .u .t l v d s + - v d d a 10v
STM8330 www.samhop.com.tw mar,18,2010 10 ver 1.0 package outline dimensions so-8 symbols min min 0.004 0.189 0 1.35 0.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.750.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l h x 45 o a a1 a2 c de e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020
STM8330 www.samhop.com.tw mar,18,2010 11 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w 1 n w m g v r h k s ver 1.0

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